C band internally matched power GaAs FET
< C band internally matched power GaAs FET >
MGFC47V5864
5.8 – 6.4 GHz BAND / 50W
DESCRIPTION
The MGFC47V5864 is an inte...
Description
< C band internally matched power GaAs FET >
MGFC47V5864
5.8 – 6.4 GHz BAND / 50W
DESCRIPTION
The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class AB operation Internally matched to 50(ohm) system High output power
P1dB=50W (TYP.) @f=5.8 – 6.4GHz High power gain
GLP=9.5dB (TYP.) @f=5.8 – 6.4GHz High power added efficiency
PAE=35% (TYP.) @f=5.8 – 6.4GHz
APPLICATION
Solid-state power amplifier for satellite earth-station communication transmitter and VSAT
2MIN .
17 .4 +/-0.2 8.0+/-0.2 2.4
2 MIN.
OUTLINE DRAWING
Unit : millimeters
2 4+/-0.3
(1)
(2 )
(3) 0 .7 +/-0.15
20 .4 +/-0.2
1 6.7
1.3 15.8 4.7 m ax.
2 .3 +/-0 .2 0.1+/-0.05
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=9.8A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown volt...
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