C band internally matched power GaAs FET
< C band internally matched power GaAs FET >
MGFC42V5964
5.9 – 6.4 GHz BAND / 16W
DESCRIPTION
The MGFC42V5964 is an inte...
Description
< C band internally matched power GaAs FET >
MGFC42V5964
5.9 – 6.4 GHz BAND / 16W
DESCRIPTION
The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=16W (TYP.) @f=5.9 – 6.4GHz High power gain
GLP=9dB (TYP.) @f=5.9 – 6.4GHz High power added efficiency
P.A.E.=31% (TYP.) @f=5.9 – 6.4GHz Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=32dBm S.C.L
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier item 51 : 5.9 – 6.4 GHz band digital radio communication
OUTLINE DRAWING
Unit: millimeters (inches)
R1.25
24+ /-0.3
(1) 0.6+/-0.15
2MIN
R1.2
(2)
17.4+/-0.3 8.0+/-0.2
2MIN
(3) 20.4+/-0.2
13.4
0.1 2.4+/-0.2 15.8
4.0+/-0.4 1.4
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=4.5A Refer to Bias Procedu...
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