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MGFC42V3742

Mitsubishi

C band internally matched power GaAs FET

< C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W DESCRIPTION The MGFC42V3742 is an inte...


Mitsubishi

MGFC42V3742

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Description
< C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=3.7 – 4.2GHz  High power gain GLP=11dB (TYP.) @f=3.7 – 4.2GHz  High power added efficiency P.A.E.=32% (TYP.) @f=3.7 – 4.2GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=31dBm S.C.L APPLICATION  item 01 : 3.7 – 4.2 GHz band power amplifier  item 51 : 3.7 – 4.2 GHz band digital radio communication OUTLINE DRAWING Unit: millimeters (inches) R1.25 24+ /-0.3 (1) 0.6+/-0.15 2MIN R1.2 (2) 17.4+/-0.3 8.0+/-0.2 2MIN (3) 20.4+/-0.2 13.4 0.1 2.4+/-0.2 15.8 4.0+/-0.4 1.4 QUALITY  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=4.5A  RG=25ohm Refer t...




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