MGFC40V7177

< C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system High output power P1dB=10W (TYP.) @f=7.1 – 7.7GHz High power gain GLP=8.0dB (TYP.) @f=7.1 – 7.7GHz High power added efficiency P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION item 01 : 7.1 – 7.7GHz band microwave high power amplifier item 51 : 7.1 – 7.7GHz band digital radio communication QUALITY IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A RG=50ohm Refer to Bias Procedure 4.2±0.3 Absolute maximum ratings (Ta=25°C) Symbol Parameter VGDO Gate to drain breakdown voltage VGSO Gate to source breakdown voltage ID Drain current IG...