MGFC40V5258

< C band internally matched power GaAs FET > MGFC40V5258 5.2 – 5.8 GHz BAND / 10W DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system High output power P1dB=10W (TYP.) @f=5.2 – 5.8GHz High power gain GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz High power added efficiency P.A.E.=31% (TYP.) @f=5.2 – 5.8GHz Low distortion [item -51] IM3=-45dBc (Typ.) @Po=29.0dBm S.C.L APPLICATION item 01 : 5.2 – 5.8 GHz band microwave high power amplifier item 51 : 5.2 – 5.8 GHz band digital radio communication QUALITY IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.4A RG=50ohm Refer to Bias Procedure 4.2±0.3 Absolute maximum ratings (Ta=25°C) Symbol Parameter VGDO Gate to drain breakdown voltage VGSO Gate to source breakdown voltage ID Drain current ...