MGFC39V5258

< C band internally matched power GaAs FET > MGFC39V5258 5.2 – 5.8 GHz BAND / 8W DESCRIPTION The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=5.2 – 5.8GHz  High power gain GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz  High power added efficiency P.A.E.=30% (TYP.) @f=5.2 – 5.8GHz APPLICATION  5.2 – 5.8 GHz band power amplifier QUALITY  IG 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 11.3 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 0.2 12.0 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=2.4A Refer to Bias Procedure  RG=50ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to sou...