MGFC38V5964

< C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W 11.3 DESCRIPTION The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.) @f=5.9 – 6.4GHz  High power gain GLP=10dB (TYP.) @f=5.9 – 6.4GHz  High power added efficiency P.A.E.=32% (TYP.) @f=5.9 – 6.4GHz  Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=27dBm S.C.L. APPLICATION  item 01 : 5.9 – 6.4 GHz band power amplifier  item 51 : 5.9 – 6.4 GHz band digital radio communication 2MIN 12.9 +/-0.2 2MIN OUTLINE DRAW ING Unit : millimeters 21.0 +/-0.3 (1) 0.6 +/-0.15 (2) (2) R-1.6 (3) 10.7 17.0 +/-0.2 0.1 2.6 +/-0.2 4.5 +/-0.4 1.6 QUALITY  IG 12.0 0.2 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.8A  RG=100ohm Refer to ...