3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI SEMICONDUCTOR
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC36...
Description
MITSUBISHI SEMICONDUCTOR
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
21.0 +/-0.3 2 N I. 0 M 2 / + 9 . 2 1 N I M 2
OUTLINE DRAWING
Unit : millimeters
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ.) @Po=25dBm S.C.L.
(1)
0.6 +/-0.15
(2)
(2)
R-1.6
3 . 1 1
(3)
10.7 2 . 0 / + 1 . 0 6 . 2
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital ratio communication
4 . 0 / + 5 . 4
17.0 +/-0.2
6 . 1 2 . 0
QUALITY GRADE
IG
12.0
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V) ID = 1.2 (A) RG=100 (ohm)
GF-8
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1
(Ta=25deg.C) Ratings -15 -15 3.75 -10 21 25 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
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