MGF7175C Datasheet PDF

MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are ...

MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGF7175C 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7175C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required GND OUT GND VSS VD_LEV VT GND IN APPLICATION 1.9GHz band handheld phone (7mmx6.1mmx1mm) pin pitch 1.0mm QUALITY GRADE GG Block Diagram of this IC and Application Circuit Example. Regulator Battery VDD2 VDD1 Negative voltage generator VT Pout VD3 Matching circuit GND VGC Matching circuit Pin *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against...