MGF2445A

< High-power GaAs FET (small signal gain stage) > MGF2445A S to Ku BAND / 1.6W non - matched DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES  High output power Po=32.0dBm(TYP.) @f=12GHz  High linear power gain GLP=6.0dB(TYP.) @f=12GHz APPLICATION  S to Ku Band power amplifiers QUALITY  IG RECOMMENDED BIAS CONDITIONS  Vds=10V  Ids=450mA Absolute maximum ratings (Ta=25C) Symbol Parameter VGDO VGSO ID IGR IGF PT*1 Tch Tstg Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature *1:Tc=25C Ratings -15 -15 1500 -3.6 15 10 175 -65 to +175 Unit V V mA mA mA W C C Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that troub...