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MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable
OUTLINE DRAWING
4MIN.
1
Unit:millimeters
4MIN.
0.5±0.15
FEATURES
• High output power at 1dB gain compression P1dB=23dBm(TYP.) • High linear power gain GLP=9dB(TYP.) • High reliability and stability @f=8GHz
0.5±0.15
3
@f=8GHz
2
2
APPLICATION
S to X band medium-power amplifiers and oscillators.
2.5±0.2
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V • ID=100mA • Refer to Bias Procedure
1 GATE 2 SOURCE 3 DRAIN
GD-10
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol VGDO VGSO ID IGR IGF PT Tch Tstg
*1:TC=25˚C
Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature
*1
Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175
Unit V V mA mA mA W ˚C ˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) Parameter Gate to drain breakdown voltage Gate to source breakdown voltage Gate to source leakage current Saturated drain current Gate source cut-off voltage Transconductance Linear power gain Output power at 1dB gain compression Thermal resistance Test conditions IG=-200µA IG=-200µA VGS=-3V,VDS=0V VGS=0V,VDS=3V VDS=3V,ID=100µA VDS=3V,ID=100mA VDS=6V,ID=100mA,f=8GHz VDS=6V,ID=100mA,f=8GHz *1 ∆Vf method Min -8 -8 – 150 -1.5 70 7 21.8 – Limits Typ – – – 200 – 90 9 23.0 – Max – – 20 250 -4.5 – – – 125 Unit V V µA mA V mS dB dBm ˚C/W
*1:Channel to ambient
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
TYPICAL CHARACTERISTICS (Ta=25˚C)
ID vs. VDS
200 VGS=-0.5V/step VGS=0V
100
0 0 2 4 6 8 10
DRAIN TO SOURCE VOLTAGE VDS(V)
PO vs. Pin (f=8GHz)
30 ID=100mA 25 20 PO 15 10 15 10 Gain:10dB 8 6 4 2 30 ID=100mA 25 20
PO vs. Pin (f=12GHz)
Gain:10dB 8 6 4 2
PO
5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25
5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
S11 ,S22 vs. f.
+j50 +j25 12.0GHz 0.5GHz +j10 +j250 +j100
S21 ,S12 vs. f.
+90˚
S21
S12 0.5GHz 12.0GHz
0
25 12.0GHz
50
100
250 0.5GHz
±180˚
6
5
4
3
2
1
0
0˚ 12.0GHz
I S 21 I
-j10 S11 -j25
S22 0.5GHz -j100 -j50
-j250
0.1
Ta=25˚C VDS=6V ID=100mA
0.2 -90˚
S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA)
Freq. (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Magn. 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 S11 Angle(deg.) -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 Magn. 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 S21 Angle(deg.) 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 Magn. 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 S12 Angle(deg.) 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 Magn. 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 S22 Angle(deg.) -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 K 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 MSG/MAG (dB) 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5
Nov. ´97
.