Preliminary
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0918A
L & S BAND GaAs FET [ SMD non – matched ]
FEATURES
· High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm · High power gain Gp=20dB(TYP.) @f=1.9GHz · High power added efficiency hadd=45%(TYP.) @...