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MGF0918A

Mitsubishi

L & S BAND GaAs FET [ SMD non - matched ]


Description
Preliminary DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. MITSUBISHI SEMICONDUCTOR MGF0918A L & S BAND GaAs FET [ SMD non – matched ] FEATURES · High output power Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm · High power gain Gp=20dB(TYP.) @f=1.9GHz · High power added efficiency hadd=45%(TYP.) @...



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