MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉
MGF0911A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
OUTLINE DRAWING
17.5
1
Unit:millimeters
FEATURES
Class A operation High output power P1dB=41dBm(TYP) High power gain GLP=11dB(TYP) High power added efficiency ηadd=4...
