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< High-power GaAs FET (small signal gain stage) >
MGF0906B
L & S BAND / 5W non - matched
DESCRIPTION
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.
FEATURES
• Class A operation
• High output power
P1dB=37.0dBm(T.Y.P) @f=2.3GHz
• High power gain
GLP=11.0dB(TYP.) @f=2.3GHz
• High power added efficiency
P.A.E=40%(TYP.)
@f=2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
• For L & S band power amplifiers
QUALITY
• IG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=1.2A • Rg=100Ω
Absolute maximum ratings
Symbol
Parameter
VGDO Gate to Source Voltage
VGSO Gate to source voltage
ID Drain Current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature
Tstg Storage temperature
*1:Tc=25°C
(Ta=25°C)
Ratings
-15 -15 3.5 -10 21 23 175 -65 to +175
Unit
V V A mA mA W °C °C
OUTLINE DRAWING
Unit:millimeters
4 MIN
17.5
.