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MGF0906B Dataheets PDF



Part Number MGF0906B
Manufacturers Mitsubishi
Logo Mitsubishi
Description High-power GaAs FET
Datasheet MGF0906B DatasheetMGF0906B Datasheet (PDF)

< High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications. FEATURES • Class A operation • High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E=40%(TYP.) @f=2.3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifier.

  MGF0906B   MGF0906B



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< High-power GaAs FET (small signal gain stage) > MGF0906B L & S BAND / 5W non - matched DESCRIPTION The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications. FEATURES • Class A operation • High output power P1dB=37.0dBm(T.Y.P) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E=40%(TYP.) @f=2.3GHz,P1dB • Hermetically sealed metal-ceramic package with ceramic lid APPLICATION • For L & S band power amplifiers QUALITY • IG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=1.2A • Rg=100Ω Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage ID Drain Current IGR Reverse gate current IGF Forward gate current PT*1 Total power dissipation Tch Cannel temperature Tstg Storage temperature *1:Tc=25°C (Ta=25°C) Ratings -15 -15 3.5 -10 21 23 175 -65 to +175 Unit V V A mA mA W °C °C OUTLINE DRAWING Unit:millimeters 4 MIN 17.5 .


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