Document
Agilent MGA-52543 Low Noise Amplifier
Data Sheet
Features • Operating frequency: 0.4 GHz ~ 6.0 GHz • Minimum noise figure: 1.61 dB at 1.9 GHz • Associated gain : 15 dB at 1.9 GHz Description Agilent Technologies’ MGA-52543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and high linearity 0.4 to 6 GHz application, the LNA focus is Cellular/PCS base stations. To attain NFmin condition, some simple external matching is required. The MGA-52543 features a calculated NFmin of 1.61 dB and 15 dB associated gain at 1.9 GHz from a cascode stage, feedback FET amplifier. The input and output are partially matched to be near 50 Ω. Simplified Schematic For base station radio card unit LNA application where better than 2:1 VSWR is required, a series inductor on the input and another series inductor on the output can be added externally. The resulting Noise Figure is typically 1.9 dB with 14 dB Gain at 1.9 GHz. With a single 5.0V supply, the LNA typically draws 53 mA. This alignment results in an Input Intercept Point of 17.5 dBm. The MGA-52543 is a GaAs MMIC, fabricated using Agilent Technologies’ cost-effective, reliable PHEMT (Pseudomorphic High Electron Mobility Transistor) process. It is housed in the SOT-343 (SC70 4-lead) package. This package offers miniature size (1.2 mm by 2.0 mm), thermal dissipation, and RF characteristics.
Vd 5V 360 pF 22 nH
• 1.9 GHz performance tuned for VSWR < 2:1 Noise figure: 1.9 dB Gain: 14 dB P1dB: +17.5 dBm Input IP3: +17.5 dBm • Single supply 5.0 V operation Applications • Cellular/PCS base station radio card LNA • High dynamic range amplifier for base stations, WLL, WLAN, and other applications Surface Mount Package SOT-343/4-lead SC70
Pin Connections and Package Marking
3 INPUT 1 GND 2 OUTPUT & Vd
3.3 nH
2.2 nH
18 pF
42
MGA-52543
GND
4
MGA-52543 Absolute Maximum Ratings [1] Symbol
Vd Vd Pd Pin Tj TSTG
Parameter
Maximum Input Voltage Supply Voltage Power Dissipation [2,3] CW RF Input Power Junction Temperature Storage Temperature
Units
V V mW dBm °C °C
Absolute Maximum
±0.5 7.0 425 +20 160 -65 to 150
Thermal Resistance:[2]
θjc = 150°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Tcase = 25°C
Electrical Specifications Tc = +25°C, Zo = 50 Ω, Vd = 5V, unless noted Symbol
I d test NF [1] Gain [1] IIP3 [1] Fmin [2] Ga[2] OIP3 [1] P1dB [1] RL in[1] RL out [1] ISOL [1]
Parameter and Test Condition
Current drawn Noise Figure Gain Input Third Order Intercept Point Minimum Noise Figure Associated Gain at Fmin Output Third Order Intercept Point Output Power at 1 dB Gain Compression Input Return Loss Output Return Loss Isolation |s12|2
Frequency
N/A 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 0.9 GHz
Units
mA dB dB dBm dB dB dBm d.