MG200Q2YS40

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 200 400 200 400 1300 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C1A 1 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 200mA ,VCE = 5V IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Transistor Diode MG200Q2YS40 Min Typ. Max Unit ― ― ±20 ― ―...