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MG200Q1ZS11

Toshiba

Silicon N Channel IGBT GTR Module


Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs (Max.) trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case Equivalent Circuit JEDEC EIAJ TOSHIBA Weight...



Toshiba

MG200Q1ZS11

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