Silicon N Channel IGBT GTR Module
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US51
MG200Q1US51
High Power Switching Applications Motor Control Appl...
Description
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1US51
MG200Q1US51
High Power Switching Applications Motor Control Applications
Unit: mm
l High input impedance l High speed : tf = 0.3µs (Max.)
@Inductive load l Low saturation voltage
: VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
JEDEC EIAJ TOSHIBA Weight: 465g
Characteristic
Symbol
Collector-emitter voltage Gate-emitter voltage
Collector current
DC 1ms
Forward Current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCES VGES
IC (25°C / 80°C)
ICP (25°C / 80°C)
IF IFM PC Tj Tstg
Isolation voltage
VIsol
Screw torque (Terminal : M4/M6/mounting)
―
Rating
1200 ±20
300 / 200
600 / 400
200 400 1500 150 −40 ~ 125 2500 (AC 1 min.) 2/3/3
Unit V V
A
A W °C °C V N·m
― ― 2-109F1A
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIB...
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