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MG100Q2YS40

Part Number	MG100Q2YS40
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG10...
Datasheet	MG100Q2YS40 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.
5µs (Max) trr = 0.
5µs (Max) l Low saturation voltage : VCE (sat) = 4.
0V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw t...

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