MG100J7KS50

TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG100J7KS50 Unit: mm l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT : VCE (sat) = 2.5 V (max) (@IC = 100 A) : tf = 0.5 µs (max) (@IC = 100 A) : trr = 0.3 µs (max) (@IF = 100 A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 520g (typ.) ― ― 2-110A1B 1 2001-08-16 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 100 200 100 200 300 150 −40 ~ 125 2500 (AC 1min.) 3/3 Unit V V A A W °C °C V N·m MG100J7KS50 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Forward voltage Rise time Turn-on time Switching time Fall time Turn-off time Reverse recovery time Thermal resistance Note 2: Silicone grease is applied. Symbol IGES ICES VGE (off) VCE (sat) Cies VF tr ton tf toff trr Rth (j-c) Rth (c-f) Test Condition Min VGE = ±20V, VCE = 0V VCE = 600V, VGE = 0V VCE = 5 V, IC = 10 mA IC = 100 A, VGE = 15 V VCE = 10 V, VGE = 0 ...