Document
MF70
MF70
Fast Recovery Diode Advance Information
Replaces March 1998 version, DS4195-2.1 DS1955-3.0 January 2000
APPLICATIONS
s Inverse Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications
KEY PARAMETERS VRRM 1600V IF(AV) 70A IFSM 700A Qr 26µC trr 915ns
FEATURES
s Glass Passivation s Fast Recovery Characteristics s High Voltage Capabilities
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 Conditions
MF70-1600 MF70-1400 MF70-1200
VRSM = VRRM + 100V
Lower voltage grades available. For stud anode add suffix 'R' to type number.
Outline type code: DO5. See Package Details for further information.
CURRENT RATINGS
Symbol IF(AV) IF(RMS) IF Parameter Mean forward current RMS value Continuous (direct) forward current Conditions Half wave resistive load, Tcase = 75oC Tcase = 75oC Tcase = 75oC Max. 70 110 90 Units A A A
1/8
MF70
SURGE RATINGS
Symbol IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; with 100% VRRM, Tj = 125oC 10ms half sine; Tj = 125oC Max. 700 2450 Units A A2s
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 3.5Nm with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting torque Use torque wrench -55 3.2 125 125 3.8
o
Conditions
Min. -
Max. 0.37 0.2 125
Units
o
C/W
o
C/W
o
C C
˚C Nm
CHARACTERISTICS
Symbol VFM IRM trr Qr trr VTO rT VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge Reverse recovery time Threshold voltage Slope resistance Forward recovery voltage Parameter Conditions At 210A peak, Tcase = 25oC At VRRM, Tcase = 100oC IF = 1A, diRR/dt = 25A/µs Tcase = 25oC, VR = 100V IF = 100A, diRR/dt = 100A/µs Tcase = 25oC, VR = 100V At Tvj = 125oC At Tvj = 125oC di/dt = 1000A/µs, Tj = 125oC Typ. 80 Max. 2.0 10 300 26 915 1.3 3.34 Units V mA
ns
µC ns V mΩ V
2/8
MF70
CURVES
500
Measured under pulse conditions
80
400
Instantaneous forward current - (A)
Tcase = 25˚C
Transient forward voltage - (V)
60
95%
300
40 5%
200
20
100
Tj = 125˚C Tj = 25˚C
0
0
0
200 400 600 800 1000 1200 Rate of rise of forward current - (A/µs)
0
1.0 2.0 3.0 Instantaneous forward voltage - (V)
Fig.2 Forward recovery voltage vs rate of rise of forward voltage
Fig.1 Maximum (limit) forward characteristics
0.5
Thermal impedance - ˚C/W
0.4 d.c. 0.3
0.2
0.1
0 0.001
0.01
0.1 Time - (s)
1.0
10
Fig.3 Maximum transient thermal impedance - junction to case
3/8
MF70
1.05 1.0
Recovery time - (µs)
Tcase = 125˚C
0.9 0.8 0.7 0.6 0.55 IF = 100A 95% IF = 50A IF = 100A 5% IF = 50A 1 10 100 Rate of rise of reverse current - (A/µs)
Fig.4 Recovery time vs dIR/dt
1000
40 IF = 100A T = 125˚C 36 case 95% 32 IF = 50A 28 IF = 100A 24 5% 20 IF = 50A 16 12 8 4 0 1 10 100 Rate of change of reverse current - (A/µs)
Fig.