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MF1011B900Y

Philipss
Part Number MF1011B900Y
Manufacturer Philipss
Description Microwave power transistor
Published Apr 29, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of Dece...
Datasheet PDF File MF1011B900Y PDF File

MF1011B900Y
MF1011B900Y

Overview
DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circui...


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