Document
Standard Rectifier Module
Single Diode
Part number
MDO500-14N1
23
MDO500-14N1
VRRM = 1400 V
I FAV
=
560 A
VF = 0.98 V
Backside: isolated
Features / Advantages:
● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour
Applications:
● Diode for main rectification ● For single and three phase
bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: Y1
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper
internally DCB isolated ● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
Rectifier
Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1400 V
VR = 1400 V
forward voltage drop
IF = 500 A
IF = 1000 A
IF = 500 A
IF = 1000 A
average forward current
TC = 85°C
RMS forward current
180° sine
d = 0.5
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDO500-14N1
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 140°C TVJ = 25°C
TVJ = 125 °C
TVJ = 140°C
TVJ = 140°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 25°C
Ratings
min. typ. max. Unit 1500 V
1400 V
1 mA
30 mA
1.09 V
1.24 V
0.98 V
1.17 V
560 A
A
0.80 V
0.38 mΩ
0.072 K/W
0.024
K/W
1600 W
15.0 kA
16.2 kA
12.8 kA
13.8 kA
1.13 MA²s
1.09 MA²s
812.8 kA²s
788.8 kA²s
762 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
MDO500-14N1
Package Y1
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min. typ. max. Unit 600 A
-40 140 °C
-40 125 °C
-40 125 °C
650 g
4.5 7 Nm
11 13 Nm
16.0 mm
25.0 mm
3600
V
3000
V
Production Index (PI)
Date Code (DC)
yywwAA
Part Number
Lot.No: xxxxxx
Circuit
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36)
Ordering Standard
Ordering Number MDO500-14N1
Marking on Product MDO500-14N1
Delivery Mode Box
Quantity Code No. 2 464805
Similar Part MDO500-12N1 MDO500-16N1 MDO500-18N1 MDO500-20N1
MDO500-22N1
Package Y1-2-CU Y1-2-CU Y1-2-CU Y1-2-CU
Y1-2-CU
Voltage class 1200 1600 1800 2000
2200
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.8 0.19
* on die level
T VJ = 140°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
Outlines Y1
2x M8
MDO500-14N1
15 ±1
+0 -1,4
45 67
38 43
49
52
10
22.5
35
28.5
50
23
6.2 80 92
23
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
MDO500-14N1
Rectifier
14000
12000
10000 ITSM
8000 [A]
6000
4000
2000
50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C
107
VR = 0V
I2t 106
A2s
TVJ = 45°C TVJ = 140°C
1000
800
IFAVM 600 [A]
400
200
DC 180° sin 120° 60° 30°
0 0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current IFSM: Crest value, t: duration
105 1
10
t [ms] Fig. 2 I2t versus time (1-10 ms)
0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Maximum forward current
at case temperature
1200
1000
800 Ptot
600 [W]
400
200
DC 180° sin 120° 60° 30°
RthKA K/W
.