65A / 1000V P-Type MOS Controlled Thyristor
Semiconductor
April 1999
CES PRO
S
NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS
MCTV65P100F1, MCTA65P100F1
J...
Description
Semiconductor
April 1999
CES PRO
S
NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS
MCTV65P100F1, MCTA65P100F1
JEDEC STYLE TO-247
ANODE ANODE CATHODE GATE RETURN GATE
65A, 1000V P-Type MOS Controlled Thyristor (MCT)
Package
Features
65A, -1000V VTM ≤ -1.4V at I = 65A and +150oC 2000A Surge Current Capability 2000A/µs di/dt Capability MOS Insulated Gate Control 100A Gate Turn-Off Capability at +150oC
CATHODE (FLANGE)
Description
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching.
PART NUMBER INFORMATION PART NUMBER MCTV65P100F1 MCTA65P100F1 PACKAGE TO-247 MO-093AA BRAND M65P100F1 M65P100F1
JEDEC MO-093AA (5-LEAD TO-218)
ANODE ANODE CATHODE GATE RETURN GATE
CATHODE (FLANGE)
Symbol
G A
K
NOTE: When ordering, use the entire part number.
Formerly TA9900.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified MCTV65P100F1 MCTA65P100F1 UNITS V V A A A ...
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