Document
LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
Description
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
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MCT5201
MCT5210
MCT5211
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible. The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.
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6
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1
Features
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• • • • • •
High CTRCE(SAT) comparable to Darlingtons CTR guaranteed 0°C to 70°C High common mode transient rejection 5kV/µs Data rates up to 150 kbits/s (NRZ) Underwriters Laboratory (UL) recognized (file #E90700) VDE recognized (file #94766) – Add option 300 (e.g., MCT5211.300)
SCHEMATIC
ANODE 1
6 BASE
Applications
• • • • • • CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER Continuous Forward Current Reverse Input Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C DETECTOR Continuous Collector Current Detector Power Dissipation Derate Linearly from 25°C
© 2003 Fairchild Semiconductor Corporation
CATHODE 2 5 COL
3
4 EMITTER
Symbol
Device
Value
Units
TSTG TOPR TSOL PD
All All All All
-55 to +150 -55 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 150 150 2.0
°C °C °C mW mW/°C mA V A mW mW/°C mA mW mW/°C
IF VR IF(pk) PD
All All All All All All All All
IC PD
Page 1 of 11
6/10/03
LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters EMITTER Input Forward Voltage Forward Voltage Temp. Coefficient Reverse Voltage Junction Capacitance DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current Capacitance Collector to Emitter Collector to Base Emitter to Base (IC = 1.0 mA, IF = 0) (IC = 10 µA, IF = 0) (IC = 10 µA, IF = 0) (VCE = 10V, IF = 0, RBE = 1MΩ) (VCE = 0, f = 1 MHz) (VCB = 0, f = 1 MHz) (VEB = 0, f = 1 MHz) BVCEO BVCBO BVEBO ICER CCE CCB CEB All All All All All All All 30 30 5 100 120 10 1 10 80 15 100 V V V nA pF pF pF (IF = 5 mA) (IF = 2 mA) (IR = 10 µA) (VF = 0 V, f = 1.0 MHz) VF ∆VF ∆TA VR CJ All All All All 6 18 1.25 -1.75 1.5 V mV/ °C V pF Test Conditions Symbol Device Min Typ** Max Units
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage(10) Isolation Resistance(10) Isolation Capacitance(9) Common Mode Transient Rejection – Output High Common Mode Transient Rejection – Output Low **All typical TA=25°C Test Conditions (f = 60Hz, t = 1 min.) VI-O = 500 VDC, TA = 25°C VI-O = 0, f = 1 MHz VCM = 50 VP-P1, RL= 750Ω, IF = 0 VCM = 50 VP-P , RL= 1KΩ, IF = 0 VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA Symbol VISO RISO CISO CMH CML Device All All All MCT5210/11 MCT5200/01 MCT5210/11 MCT5200/01 Min 5300 1011 0.7 5000 5000 Typ** Max Units Vac(rms) Ω pF V/µs V/µs
© 2003 Fairchild Semiconductor Corporation
Page 2 of 11
6/10/03
LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.)
DC Characteristics Test Conditions Symbol Device MCT5200 MCT5201 MCT5210 MCT5211 MCT5210 CTR(CE) MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 Device MCT5210 Min Typ 10 7 14 15 17 24 1.6 3 0.4 8 2.5 11 7 16 18 12 0.5 1.1 1.3 2.5 Min 75 120 60 100 75 70 150 110 0.2 0.28 0.2 0.3 0.25 0.4 0.4 0.4 0.4 Max Typ** Max Units IF = 10 mA, VCE = 0.4 V IF = 5 mA, VCE = 0.4 V Saturated Current IF = 3.0 mA, VCE = 0.4 V Transfer Ratio(1) (Collector to Emitter) IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V IF = 3.0 mA, VCE = 5.0 V Current Transfer Ratio I = 1.6 mA, VCE = 5.0 V (Collector to Emitter)(1) F IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCB = 4.3 V IF = 5 mA, VCB = 4.3 V Current Transfer Ratio IF = 3.0 mA, VCE = 4.3 V Collector to Base(2) IF = 1.6 mA, VCE = 4.3 V IF = 1.0 mA, VCE = 4.3 V IF = 10 mA, ICE = 7.5 mA IF = 5 mA, ICE = 6 mA Saturation Voltage IF = 3.0 mA, ICE = 1.8 mA IF = 1.6 mA, ICE = 1.6 mA AC Characteristics Test Conditions RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ VCE = 0.4V, VCC = 5V, RL = fig. 13, R.