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MCT5200 Dataheets PDF



Part Number MCT5200
Manufacturers Fairchild
Logo Fairchild
Description LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet MCT5200 DatasheetMCT5200 Datasheet (PDF)

LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. 6 MCT5201 MCT5210 MCT5211 The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible. The MCT52XX can easily interface LSTTL to LSTTL.

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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. 6 MCT5201 MCT5210 MCT5211 The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible. The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved. 6 6 1 1 Features 1 • • • • • • High CTRCE(SAT) comparable to Darlingtons CTR guaranteed 0°C to 70°C High common mode transient rejection 5kV/µs Data rates up to 150 kbits/s (NRZ) Underwriters Laboratory (UL) recognized (file #E90700) VDE recognized (file #94766) – Add option 300 (e.g., MCT5211.300) SCHEMATIC ANODE 1 6 BASE Applications • • • • • • CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C EMITTER Continuous Forward Current Reverse Input Voltage Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C DETECTOR Continuous Collector Current Detector Power Dissipation Derate Linearly from 25°C © 2003 Fairchild Semiconductor Corporation CATHODE 2 5 COL 3 4 EMITTER Symbol Device Value Units TSTG TOPR TSOL PD All All All All -55 to +150 -55 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 150 150 2.0 °C °C °C mW mW/°C mA V A mW mW/°C mA mW mW/°C IF VR IF(pk) PD All All All All All All All All IC PD Page 1 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters EMITTER Input Forward Voltage Forward Voltage Temp. Coefficient Reverse Voltage Junction Capacitance DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current Capacitance Collector to Emitter Collector to Base Emitter to Base (IC = 1.0 mA, IF = 0) (IC = 10 µA, IF = 0) (IC = 10 µA, IF = 0) (VCE = 10V, IF = 0, RBE = 1MΩ) (VCE = 0, f = 1 MHz) (VCB = 0, f = 1 MHz) (VEB = 0, f = 1 MHz) BVCEO BVCBO BVEBO ICER CCE CCB CEB All All All All All All All 30 30 5 100 120 10 1 10 80 15 100 V V V nA pF pF pF (IF = 5 mA) (IF = 2 mA) (IR = 10 µA) (VF = 0 V, f = 1.0 MHz) VF ∆VF ∆TA VR CJ All All All All 6 18 1.25 -1.75 1.5 V mV/ °C V pF Test Conditions Symbol Device Min Typ** Max Units ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage(10) Isolation Resistance(10) Isolation Capacitance(9) Common Mode Transient Rejection – Output High Common Mode Transient Rejection – Output Low **All typical TA=25°C Test Conditions (f = 60Hz, t = 1 min.) VI-O = 500 VDC, TA = 25°C VI-O = 0, f = 1 MHz VCM = 50 VP-P1, RL= 750Ω, IF = 0 VCM = 50 VP-P , RL= 1KΩ, IF = 0 VCM = 50 VP-P1, RL = 750Ω, IF =1.6mA VCM = 50 VP-P1, RL= 1KΩ, IF = 5 mA Symbol VISO RISO CISO CMH CML Device All All All MCT5210/11 MCT5200/01 MCT5210/11 MCT5200/01 Min 5300 1011 0.7 5000 5000 Typ** Max Units Vac(rms) Ω pF V/µs V/µs © 2003 Fairchild Semiconductor Corporation Page 2 of 11 6/10/03 LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS MCT5200 MCT5201 MCT5210 MCT5211 TRANSFER CHARACTERISTICS (TA = 0°C to 70°C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device MCT5200 MCT5201 MCT5210 MCT5211 MCT5210 CTR(CE) MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 Device MCT5210 Min Typ 10 7 14 15 17 24 1.6 3 0.4 8 2.5 11 7 16 18 12 0.5 1.1 1.3 2.5 Min 75 120 60 100 75 70 150 110 0.2 0.28 0.2 0.3 0.25 0.4 0.4 0.4 0.4 Max Typ** Max Units IF = 10 mA, VCE = 0.4 V IF = 5 mA, VCE = 0.4 V Saturated Current IF = 3.0 mA, VCE = 0.4 V Transfer Ratio(1) (Collector to Emitter) IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V IF = 3.0 mA, VCE = 5.0 V Current Transfer Ratio I = 1.6 mA, VCE = 5.0 V (Collector to Emitter)(1) F IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCB = 4.3 V IF = 5 mA, VCB = 4.3 V Current Transfer Ratio IF = 3.0 mA, VCE = 4.3 V Collector to Base(2) IF = 1.6 mA, VCE = 4.3 V IF = 1.0 mA, VCE = 4.3 V IF = 10 mA, ICE = 7.5 mA IF = 5 mA, ICE = 6 mA Saturation Voltage IF = 3.0 mA, ICE = 1.8 mA IF = 1.6 mA, ICE = 1.6 mA AC Characteristics Test Conditions RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 kΩ RL = 330 Ω, RBE = ∞ RL = 3.3 kΩ, RBE = 39 kΩ RL = 750 Ω, RBE = ∞ RL = 4.7 kΩ, RBE = 91 kΩ RL = 1.5 kΩ, RBE = ∞ RL = 10 kΩ, RBE = 160 kΩ VCE = 0.4V, VCC = 5V, RL = fig. 13, R.


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