MCT2E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCT2/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The MCT and MCT2E devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances I/O Interfacing Solid State Relays Monitor and Detection Circuits To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 150 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 120 1.41 Vol...