MCR72-3

MCR72-3, MCR72-6, MCR72-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features Center Gate Geometry for Uniform Current Density All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 mA Maximum for Direct Driving from Integrated Circuits Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = *40 to 110°C, Sine Wave, VRRM 50 Hz to 60 Hz) MCR72−3 100 MCR72−6 400 MCR72−8 600 On-State RMS Current (180° Conduction Angles; TC = 83°C) IT(RMS) 8.0 A Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = 110°C) ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s Forward Peak Gate Voltage (t ≤ 10 ms, TC = 83°C) Forward Peak Gate Current (t ≤ 10 ms, TC = 83°C) Forward Peak Gate Power (t ≤ 10 ms, TC = 83°C) Average Gate Power (t = 8.3 ms, TC = 83°C) VGM "5.0 V IGM 1.0 A PGM 5.0 W PG(AV) 0.75 W Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Mounting Torque − 8.0 in. lb...