M39832

M39832 Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS FLASH ARRAY – Boot block (Top or Bottom location) – Parameter and Main blocks – Selectable x8/x16 Data Bus (BYTE pin). EEPROM ARRAY – x8 Data Bus only. 120ns ACCESS TIME (Flash and EEPROM array) WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM) 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION LOW POWER CONSUMPTION – Stand-by mode: 100µA – Automatic Stand-by mode 64 bytes ONE TIME PROGRAMMABLE MEMORY (x8 Data Bus only) STANDARD EPROM/OTP MEMORY PACKAGE EXTENDED TEMPERATURE RANGES TSOP48 (NE) 12 x 20 mm Figure 1. Logic Diagram VCC 19 A0-A18 W 15 DQ0-DQ14 DQ15A–1 M39832 BYTE ERB FRB DESCRIPTION The M39832 is a memory device combining Flash and EEPROM into a single chip and using single supply voltage. The memory is mapped in two arrays: 8 Mbit of Flash memory and 256 Kbit of EEPROM memory. Each space is independant for writing, in concurrent mode the Flash Memory can be read while the EEPROM is being written. An additional 64 bytes of EPROM are One Time Programmable. The M39832 EEPROM memory array is organized in byte only (regardless on the BYTE pin). It may be written by byte or by page of 64 bytes and the integrity of the data can be secured with the help of the Software Data Protection (SDP). EE EF G RP VSS AI00844 February 1999 This is preliminary info...