MHW930

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW930/D UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. Specified 26 Volt and 25 °C Characteristics: RF Input Power: 60 mW Max RF Power Gain: 27 dB Min at 30 W Output Power RF Output: 30 Watts Min at 1.0 dB Compression Point Efficiency: 44% Min at 30 Watts Output Power 50 Ohm Input/Output Impedances MHW930 30 W 925 – 960 MHz RF POWER AMPLIFIER CASE 301AB–02, STYLE 1 MAXIMUM RATINGS Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol VS VB Pin Pout TC Tstg Value 28 28 22 50 – 10 to + 100 – 30 to + 100 Unit Vdc Vdc dBm W °C °C ELECTRICAL CHARACTERISTICS (VS = 26 Vdc; VBIAS = 26 Vdc; TC = +25°C; 50 Ω system) Characteristic Frequency Range VS1 Quiescent Current (Pin = 0 mW) VS2 Quiescent Current (Pin = 0 mW) Power Gain (Pout = 30 W) (1) Output Power at 1 dB Compression EFficiency (Pout = 30 W) (1) Input VSWR Harmonic 2 fo (Pout = 30 W) (1) Harmonic 3 fo (Pout = 30 W) (1) Reverse Intermodulation Distortion (Pcarrier = 30 W; Pinterferer at –70 dBc; fi = fc ± 600 kHz) (1) Load Mismatch Stress (Pout = 30 W; Load VSWR = 10:1; All Phase Angles) Stability (Pout = 10 mW – 30 W; Load VSWR = 3:1; All Phase Angles; TC = –10°C to 85°C) (1) Adjust Pin for...