MHW2821-1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2821/D The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. Specified 12.5 Volt Characteristics: RF Input Power: ≤ 250 mW (MHW2821–1) RF Input Power: ≤ 300 mW (MHW2821–2) RF Output Power: 20 W (MHW2821–1) RF Output Power: 18 W (MHW2821–2) LDMOS FET Technology Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture 50 Ω Input/Output Impedance Guaranteed Stability and Ruggedness Cost Effective MHW2821-1 MHW2821-2 –1: 20 W, 806 – 870 MHz –2: 18 W, 890 – 950 MHz RF POWER AMPLIFIER CASE 301AB–02, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltages RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol Vbias, VS2, VS3 Pin Pout TC Tstg Value 12.5 16 400 23 – 30 to +100 – 30 to +100 Unit Vdc mW W °C °C ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; Vbias = 12.5 Vdc; TC = + 25°C, 50 Ω system, unless otherwise noted) Characteristic Frequency Range Input Power (Pout = 20 W) (1) Input Power (Pout = 18 W) (1) Power Gain (Pout = 20 W) (1) Power Gain (Pout = 18 W) (1) Efficiency (Rated Pout) Harmonics (Rated Pout Reference) (1) Input VSWR (Rated Pout) (1) (1) Adjust Pin for specified Pout. MHW2821–1 MHW2821–2 MHW2821–1 MHW2821–2 MHW2821–1 MHW2821–2 Symbol BW Pin GP η 2fo 3fo VSWRin Min 806 890 — — 19 17.9 35...