MHVIC915R2

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHVIC915R2/D The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal performance through a solderable backside contact. Typical CDMA Performance: 869–894 MHz, 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, 1–Carrier N–CDMA, IS–95 CDMA 9–Channel Forward Driver Application Output Power — 23 dBm Power Gain — 31 dB Adjacent Channel Power Ratio — –60 dBc @ 750 kHz in a 30 kHz BW –66 dBc @ 1.98 MHz in a 30 kHz BW Output Application Output Power — 34 dBm PAE = 21% Adjacent Channel Power Ratio — –50 dBc @ 750 kHz in a 30 kHz BW Typical GSM Performance: 921–960 MHz, 26 Volts Output Power — 15 W P1dB Power Gain — 30 dB @ P1dB Drain Efficiency = 56% @ P1dB On–Chip Matching (50 Ohm Input, >9 Ohm Output) On–Chip Current Mirror gm Sensing FET for Self Bias Application Integrated Temperature Compensation Capability Usable for SCPA and MCPA Architecture Integrated ESD Protection Available in Tape ...