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MHPM7A10S120DC3 Dataheets PDF



Part Number MHPM7A10S120DC3
Manufacturers Motorola
Logo Motorola
Description Hybrid Power Module
Datasheet MHPM7A10S120DC3 DatasheetMHPM7A10S120DC3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM7A10S120DC3/D Product Preview Hybrid Power Module MHPM7A10S120DC3 Motorola Preferred Device Integrated Power Stage for 2.0 hp 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is designed for 2.0 hp general purpose 3–phase induction motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGB.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM7A10S120DC3/D Product Preview Hybrid Power Module MHPM7A10S120DC3 Motorola Preferred Device Integrated Power Stage for 2.0 hp 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is designed for 2.0 hp general purpose 3–phase induction motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The solderable top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C, 720 V • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • Independent Brake Circuit Connections • UL Recognition Pending ORDERING INFORMATION Device PHPM7A10S120DC3 Voltage Rating 1200 Current Rating 10 Equivalent Horsepower 2.0 10 AMP, 1200 VOLT HYBRID POWER MODULE CASE 464D–01 ISSUE O MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) Non–Repetitive Peak Input Rectifier Reverse Voltage (1) (TJ = 25°C to 150°C) IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current (TC = 25°C) Repetitive Peak IGBT Collector Current (2) Continuous Free–Wheeling Diode Current (TC = 25°C) Continuous Free–Wheeling Diode Current (TC = 80°C) Repetitive Peak Free–Wheeling Diode Current (2) Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) IGBT Power Dissipation per die (TC = 95°C) Free–Wheeling Diode Power Dissipation per die (TC = 95°C) Junction Temperature Range Short Circuit Duration (VCE = 720 V, TJ = 125°C) Isolation Voltage, pin to baseplate Operating Case Temperature Range Storage Temperature Range Mounting Torque — Heat Sink Mounting Holes Symbol VRRM VRSM VCES VGES ICmax IC(pk) IFmax IF80 IF(pk) IOmax PD PD TJ tsc VISO TC Tstg — Value 900 1600 1200 ± 20 10 20 10 8.6 20 16 29 13 – 40 to +150 10 2500 – 40 to +95 – 40 to +150 12 Unit V V V V A A A A A A W W °C ms Vac °C °C lb–in (1) Half–Sine 60 Hz, maximum reverse voltage capability decreases by 0.1% per °C at lower temperature (2) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Motorola IGBT Device © Motorola, Inc. 1998 Data 1 MHPM7A10S120DC3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic DC AND SMALL SIGNAL CHARACTERISTICS Input Rectifier Forward Voltage (IF = 10 A) Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) Collector–Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V) Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V) THERMAL CHARACTERISTICS, EACH DIE Thermal Resistance — IGBT Thermal Resistance — Free–Wheeling (Fast Soft) Diode Thermal Resistance — Input Rectifier TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) VF TCVF 1.983 — 2.024 –8.64 2.066 — V mV/°C RqJC RqJC RqJC — — — 1.4 3.2 3.2 1.9 4.2 4.2 °C/W °C/W °C/W VF IGES ICES VGE(th) V(BR)CES VCE(sat) VF Cies QT — — — 4.0 1200 — 1.8 — — 1.02 — 5.0 6.0 — 2.5 2.0 1200 65 1.25 ±20 100 8.0 — 3.5 2.4 — — V Symbol Min Typ Max Unit mA mA V V V V pF nC 2 Motorola IGBT Device Data MHPM7A10S120DC3 TYPICAL CHARACTERISTICS 20 18 IF, FORWARD CURRENT (AMPS) 16 14 12 10 8.0 6.0 4.0 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS) TJ = 25°C IF, FORWARD CURRENT (AMPS) 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE (VOLTS) 25°C TJ = 125°C Figure 1. Forward Characteristics — Input Rectifier Figure 2. Forward Characteristics — Free–Wheeling Diode 20 IC , COLLECTOR CURRENT (AMPS) 18 IC , COLLECTOR CURRENT (AMPS) 16 14 12 10 8.0 6.0 4.0 2.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TJ = 25°C VGE = 18 V 15 V 12 V 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) TJ = 125°C VGE = 18 V 15 V 12 V Figure 3. Forward Characteristics, TJ = 25°C Figure 4. Forward Characteristics, TJ = 125°C +15 V MBRS130T3 220 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3 MC33153 Figure 5. Recommended Gate Drive Circuit Motorola IGBT Device Data 3 MHPM7A10S120DC3 TYPICAL CHARACTERISTICS 2.5 V F, FORWARD VOLTAGE @ 1 mA (VOLTS) +15 V MAXIMUM TYPICAL MINIMUM 2.0 R1 12.4 kW 14 A/D INPUT 1.5 1.0 TY.


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