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MHPM6B15N120SL Dataheets PDF



Part Number MHPM6B15N120SL
Manufacturers Motorola
Logo Motorola
Description Hybrid Power Module
Datasheet MHPM6B15N120SL DatasheetMHPM6B15N120SL Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10N120/D Hybrid Power Module Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10N120/D Hybrid Power Module Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C, 720 V • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • UL Recognized MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Motorola Preferred Devices 10, 15, 25 A, 1200 V HYBRID POWER MODULES SL SUFFIX CASE 464A–01 Style 1 ORDERING INFORMATION Device MHPM6B10N120SL MHPM6B15N120SL MHPM6B25N120SL MHPM6B10N120SS MHPM6B15N120SS MHPM6B25N120SS Current Rating 10 15 25 10 15 25 Package 464A–01 Style 1 464B–02 Style 1 SS SUFFIX CASE 464B–02 Style 1 Symbol VCES VGES 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 ICmax Value 1200 ± 20 10 15 25 20 30 50 10 15 25 8.3 11 14 20 30 50 41 50 65 16 22 27 Unit V V A MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current (TC = 80°C) Repetitive Peak IGBT Collector Current (1) IC(pk) A Continuous Diode Current (TC = 25°C) IFmax A Continuous Diode Current (TC = 80°C) IF80 A Repetitive Peak Diode Current (1) IF(pk) A IGBT Power Dissipation per die (TC = 95°C) PD W Diode Power Dissipation per die (TC = 95°C) PD W (1) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. Motorola IGBT Device Data © Motorola, Inc. 1998 1 MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Junction Temperature Range Short Circuit Duration (VCE = 720 V, TJ = 125°C) Isolation Voltage, Pin to Baseplate Operating Case Temperature Range Storage Temperature Range Mounting Torque — Heat Sink Mounting Holes Symbol TJ tsc VISO TC Tstg — Value – 40 to +150 10 2500 – 40 to +95 – 40 to +150 1.4 Unit °C ms Vac °C °C Nm ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC AND SMALL SIGNAL CHARACTERISTICS Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125°C Forward Transconductance 10A120 15A120 25A120 IGES ICES VGE(th) V(BR)CES VCE(SAT) gfe — — 5.0 1200 1.7 — — — — 1.7 — — — — — — — — 5.0 6.0 — 2.35 2.69 8.3 14 19 2.35 1.9 1880 2620 4770 65 87 150 ± 20 100 7.0 — 2.9 — — — — 3.1 — — — — — — — µA µA V V V mho Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125°C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) 10A120 15A120 25A120 VF Cies V pF Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 15A120 25A120 QT nC INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) Recommended Gate Resistor (RG(on) = RG(off)) 10A120 15A120 25A120 Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Eon — — — 1.5 2.7 4.6 1.8 3.3 5.6 td(off) — — — tf — — — 39 48 70 47 58 84 640 780 1060 — — — td(on) — — — tr — — — 84 105 150 — — — 174 240 330 — — — RG — — — 82 82 68 — — — W ns ns ns ns mJ 2 Motorola IGBT Device Data MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Characteristic Symbol Min Typ Max Unit INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) – continued Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 Eoff — — — — — — — — — — — — 1.1 1.7 3.0 95 110 124 8.0 9.7 11.5 550 600 740 1.4 2.1 3.5 — — — — — — — — — mJ Diode Reverse Recovery Time (IF = IFmax, V = 600 V) trr ns Peak Reverse Recovery Current (IF = IFmax, V = 600 V) Irrm A Diode Stored Charge (IF = IFmax, V = 600 V) Qrr nC INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) Characteristic Turn–On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn–On Energy (VCE .


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