MHL19936

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHL19936/D PCS Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 49.5 dBm Typ Power Gain: 29 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications MHL19936 1900–2000 MHz 12 W, 29 dB RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AY–01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +16 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Third Order Intercept Noise Figure (f = 1960 MHz) (f = 1900–2000 MHz) (f = 1950 MHz) (f = 1900–2000 MHz) (f1 = 1950 MHz, f2 = 1955 MHz) (f = 2000 MHz) Symbol IDD Gp GF P1dB VSWRin ITO NF Min — 28 — 40 — 49 — Typ 1.4 29 0.2 41 1.2:1 49.5 4.2 Max 1.45 30 0.4 — 1.5:1 — 4.5 dBm dB Unit A dB dB dBm REV 3 MOTOROLA RF DEVICE DATA...