MGY40N60

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY40N60/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 60 mJ per Amp typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination Robust RBSOA C ™ Data Sheet MGY40N60 Motorola Preferred Device IGBT IN TO–264 40 A @ 90°C 66 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G–02, Style 5 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from c...