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MGY25N120D Dataheets PDF



Part Number MGY25N120D
Manufacturers ON
Logo ON
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Datasheet MGY25N120D DatasheetMGY25N120D Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY25N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suit.

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