MGY25N120

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 216 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination ™ Data Sheet MGY25N120 Motorola Preferred Device IGBT IN TO–264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G G E C E CASE 340G–02 STYLE 5 TO–264 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse wid...