MGV12N120D

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. High Power Surface Mount D3PAK Package High Speed Eoff: 160 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination MGV12N120D IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED C G C E G E CASE 433–01, Style 1 TO–268AA MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resi...