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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA
C
™ Data Sheet
MGS05N60D
POWERLUX IGBT 0.5 A @ 25°C 600 V
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E C G
G
E
CASE 029–05 TO–226AE TO92 (1.0 WATT)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Symbol VCES VCGR VGES IC25 IC90 ICM PD TJ, Tstg Value 600 600 ± 15 0.5 0.3 2.0 1.0 – 55 to 150 Unit Vdc Vdc Vdc Adc
Watt °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC RθJA TL 25 125 260 °C/W °C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W (1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
EAS 125 40
mJ
Designer’s is a trademark of Motorola, Inc.
Power © Motorola Motorola, Inc. 1997
Products Division Technical Data
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MGS05N60D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C) (VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C) Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C) (VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C) Gate Threshold Voltage (VCE = VGE, IC = 250 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 0.3 Adc, TC = 25°C) (IEC = 0.3 Adc, TC = 125°C) (IEC = 0.1 Adc, TC = 25°C) (IEC = 0.1 Adc, TC = 125°C) Reverse Recovery .