MAT02

OBSOLETE a FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain (hFE): 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394 Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION TO-78 (H Suffix) PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current. Exceptional characteristics of the MAT02 include offset voltage of 50 µV max (A/E grades) and 150 µV max F grade. Device performance is specified over the full military temperature range as well as at 25°C. Input protection diodes are provided across the emitter-base junctions to prevent degradation of the device characteristics due to reverse-biased emitter current. The substrate is clamped to the most negative emitter by the parasitic isolation junction created by the protection diodes. This results in complete isolation between the transistors. NOTE Substrate is connected to case on TO-78 package. Substrate is normally connected to the most negative circuit potential, but can be floated. The MAT02 should be ...