MASWSS0006

GaAs SP2T 2.5V High Power Switch DC - 3 GHz Preliminary Jan 17 2002 MASWSS0006 Features Low Voltage Operation 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.45 dB at 1 GHz High Isolation 18.5 dB at 2 GHz Miniature SOT-26 Package 0.5 micron GaAs pHEMT Process Functional Schematic PIN 1 PIN 6 RF1 39 pF GND V1 RFC 39 pF V2 Description M/A-COM’s MASWSS0006 is a GaAs PHEMT MMIC single pole two throw (SP2T) high power switch in a low cost miniature SOT-26 package. The MASWSS0006 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0006 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. 39 pF RF2 Pin Configuration PIN No. 1 2 PIN Name RF1 GND RF2 V1 RFC V2 Description RF Port 1 RF Ground RF Port 2 Control 1 RF Common Port Control 2 Absolute Maximum Ratings Parameter Max Input Power (0.5 - 3 GHz, 2.5V Control) Operating Voltage Operating Temperature Storage Temperature 1 3 4 5 6 Absolute Maximum +38 dBm +8.5 volts -40 oC to +85 oC -65 oC to +150 oC 1. Exce...