MASW20000

GaAs SPDT Switch DC - 20 GHz Features q q q q q q q GND RF MASW20000 GND V 2.00 Very Broadband Performance Low Insertion Loss, 1.75 dB Typical @ 18 GHz High Isolation, 50 dB Typical @ 18 GHz Fast Switching Time, 2 nS Typical Reflective Configuration Ultra Low DC Power Consumption Via Hole Grounding GND RF1 GND GND RF2 GND Guaranteed Specifications* @ +25°C** Frequency Range Insertion Loss DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz DC-20.0 GHz 1.7 dB Max 2.1 dB Max 2.5 dB Max 1.60:1 Max 1.80:1 Max 2.00:1 Max 50 dB Min 42 dB Min 40 dB Min A1 B2 B1 A2 Typical Performance INSERTION LOSS (dB) 2.0 1.5 1.0 0.5 0.0 80 0 4 8 12 16 20 VSWR Isolation ISOLATION (dB) 60 Operating Characteristics Impedance Switching Characteristics Trise, Tfall (10/90% or 90/10% RF) 2 ns Typ Ton, Toff (50% CTL to 90/10% RF) Transients (in-Band) Input Power for 1 dB Compression Control Voltages (Vdc) 0.5-20 GHz 0.05 GHz 50 Ω Nominal 40 20 3 ns Typ 20 mV Typ 0/-5 +25 dBm Typ +18 dBm Typ 0 2.0 1.8 1.6 1.4 0 VSWR 4 8 12 16 20 Output Input Intermodulation Intercept point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP3 0.5-20 GHz 0.05 GHz +59 dBm +43 dBm Typ +27 dBm Typ 0 to -0.2 V @ 5 µA Max -5 V @50 µA Max 0.083”x 0.035”X 0.004” (2.10mm X 0.89mm X 0.10mm) 1.2 1.0 0 4 8 12 16 20 FREQUENCY (GHz) Control Voltages (Complimentary Logic) Vin Low Vin Hi Die Size Schematic * Wafer level data.All specificati...