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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC320FP/D
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or Four Modes (MAC320AFP Series)
MAC320FP Series MAC320AFP Series
ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS
MT2 G
MT1
CASE 221C-02 STYLE 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC320-4FP, MAC320A4FP MAC320-6FP, MAC320A6FP MAC320-8FP, MAC320A8FP MAC320-10FP, MAC320A10FP Peak Gate Voltage On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, T C = +75° C, preceded and followed by rated current) Peak Gate Power (T C = +75° C, Pulse Width = 2 µ s) Average Gate Power (T C = +75° C, t = 8.3 ms) Peak Gate Current RMS Isolation Voltage (TA = 25° C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 VGM IT(RMS) ITSM PGM PG(AV) 10 20 150 20 0.5 2 1500 –40 to +125 –40 to +150 Volts Amps Amps Watts Watt Amps Volts °C °C Value Unit Volts
p 20%)
IGM V(ISO) TJ Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RθJC RθCS RθJA Max 1.8 2.2 (typ) 60 Unit °C/W °C/W °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data © Motorola, Inc. 1995
1
MAC320FP Series MAC320AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Symbol IDRM — — — — 1.4 10 2 1.7 Min Typ Max Unit µA mA Volts mA
Peak On-State Voltage (Either Direction) (ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Peak Gate Trigger Current (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY
p 2%)
VTM IGT
—
— — — — VGT
— — — —
50 50 50 75 Volts
Peak Gate Trigger Voltage (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 , TJ = +110°C) MT2(+), G(+); MT2(+), G(–) MT2(–), G(–); MT2(–), G(+) “A” SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) Turn-On Time (VD = Rated VDRM, ITM = 28 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 28 A, Commutating di/dt = 10 A/ms, Gate Unenergized, TC = +75°C)
— — — — 0.2 0.2 IH —
0.9 0.9 1.1 1.4 — — 6
2 2 2 2.5 — — 40 mA
t gt
—
1.5
10
µs
dv/dt(c)
—
5
—
V/µs
TYPICAL CHARACTERISTICS
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
130 PD(AV) , AVERAGE POWER (WATT) 120 110 100 90 80 70 60 50 0 2.0 α α = Conduction Angle 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 α 180° dc α = 30° 60° 90°
40 35 30 25 20 15 10 5.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 IT(RMS), RMS ON-STATE CURRENT (AMP) 18 20 60° α = 30° α α = Conduction Angle 90° α 180° dc
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
2
Motorola Thyristor Device Data
MAC320FP Series MAC320AFP Series
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED) 3 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 100 70 50 30 20 i TM , INSTANTANEOUS FORWARD CURRENT (AMP) 0.7 0.5 TJ = 25°C 125°C
1
10 7 5 3 2
0.3 –60 –40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Voltage
I GTM , GATE TRIGGER CURRENT (NORMALIZED) 3 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES
1 0.7 0.5 0.3 0.2
1 0.7 0.5 0.3 –60
0.1 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. Typical Gate Trigger Current
Figure 5. Maximum On-State Characteristics
Motorola Thyristor Device Data
3.