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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC223/D
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. • Off-State Voltages to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes (MAC223A Series)
MAC223 Series MAC223A Series
TRIACs 25 AMPERES RMS 200 thru 800 VOLTS
MT2 G
MT1
CASE 221A-04 (TO-220AB) STYLE 4
MAXIMUM RATINGS (TJ = 25° unless otherwise noted.)
Rating Peak Repetitive Off-State Voltage (TJ = –40 to 125°C)(1) (1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4, MAC223A4 MAC223-6, MAC223A6 MAC223-8, MAC223A8 MAC223-10, MAC223A10 On-State RMS Current (TC = 80°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) IT(RMS) ITSM I2t IGM VGM Symbol VDRM Value Unit Volts
200 400 600 800 25 250 260 2 ±10 20 0.5 –40 to 125 –40 to 150 8 Amps Amps A2s Amps Volts Watts Watts °C °C in. lb.
p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs)
Peak Gate Current (t Average Gate Power (TC = 80°C, t Storage Temperature Range Mounting Torque
p 8.3 ms)
PGM PG(AV) TJ Tstg —
Operating Junction Temperature Range
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data © Motorola, Inc. 1995
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MAC223 Series MAC223A Series
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 1.2 60 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Peak Blocking Current(1) (VD = Rated VDRM) TJ = 25°C TJ = 125°C Peak On-State Voltage (ITM = 35 A Peak, Pulse Width Symbol IDRM — — VTM IGT — — VGT — — 0.2 0.2 IH tgt dv/dt dv/dt(c) — — — — 1.1 1.3 0.4 0.4 10 1.5 40 5 2 2.5 — — 50 — — — mA µs V/µs V/µs 20 30 50 75 Volts — — — 1.4 10 2 1.85 Min Typ Max Unit µA mA Volts mA
p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2( + ), G( + ); MT2( – ), G( – ); MT( + ), G( – ) MT2( – ), G( + ) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY (VD = Rated VDRM, TJ = 125°C, RL = 10 k) MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
FIGURE 1 – RMS CURRENT DERATING
PD , AVERAGE POWER DISSIPATION (WATTS) 125 115 105 95 85 75 40
FIGURE 2 – ON-STATE POWER DISSIPATION
30
20
10
0 0 5.0 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS)
0
5.0
10
15
20
25
IT(RMS), RMS ON-STATE CURRENT (AMPS)
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Motorola Thyristor Device Data
MAC223 Series MAC223A Series
FIGURE 3 – GATE TRIGGER CURRENT FIGURE 4 – GATE TRIGGER VOLTAGE
NORMALIZED GATE CURRENT
NORMALIZED GATE VOLTAGE
3.0 2.0 1.0 0.5 0.3 0.2 0.1 –60 VD = 12 V RL = 100 Ω
3.0 2.0 1.0 0.5 0.3 0.2 0.1 –60 VD = 12 V RL = 100 Ω
–40
–20
0
20
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60
80
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120
140
–40
–20
0
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120
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TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 5 – HOLD CURRENT
i TM, INSTANTANEOUS ON-STATE CURRENT (AMPS)
FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS
NORMALIZED HOLD CURRENT
200 100 50 10 5.0 1.0 0.5 0.1 0 1.0 2.0 3.0 4.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ = 25°C
2.0 1.0 0.5 0.3 0.2 0.1 –60
ITM = 200 mA Gate Open
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Motorola Thyristor Device Data
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MAC223 Series MAC223A Series
PACKAGE DIMENSIONS
–T– B F C
SEATING PLANE
T
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0..