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MAC223-6 Dataheets PDF



Part Number MAC223-6
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC223-6 DatasheetMAC223-6 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC223/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. • Off-State Voltages to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Thermal .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC223/D Triacs Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. • Off-State Voltages to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Three Modes (MAC223 Series) or Four Modes (MAC223A Series) MAC223 Series MAC223A Series TRIACs 25 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25° unless otherwise noted.) Rating Peak Repetitive Off-State Voltage (TJ = –40 to 125°C)(1) (1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4, MAC223A4 MAC223-6, MAC223A6 MAC223-8, MAC223A8 MAC223-10, MAC223A10 On-State RMS Current (TC = 80°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) IT(RMS) ITSM I2t IGM VGM Symbol VDRM Value Unit Volts 200 400 600 800 25 250 260 2 ±10 20 0.5 –40 to 125 –40 to 150 8 Amps Amps A2s Amps Volts Watts Watts °C °C in. lb. p 2 µs) Peak Gate Voltage (t p 2 µs) Peak Gate Power (t p 2 µs) Peak Gate Current (t Average Gate Power (TC = 80°C, t Storage Temperature Range Mounting Torque p 8.3 ms) PGM PG(AV) TJ Tstg — Operating Junction Temperature Range 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MAC223 Series MAC223A Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 1.2 60 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current(1) (VD = Rated VDRM) TJ = 25°C TJ = 125°C Peak On-State Voltage (ITM = 35 A Peak, Pulse Width Symbol IDRM — — VTM IGT — — VGT — — 0.2 0.2 IH tgt dv/dt dv/dt(c) — — — — 1.1 1.3 0.4 0.4 10 1.5 40 5 2 2.5 — — 50 — — — mA µs V/µs V/µs 20 30 50 75 Volts — — — 1.4 10 2 1.85 Min Typ Max Unit µA mA Volts mA p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2( + ), G( + ); MT2( – ), G( – ); MT( + ), G( – ) MT2( – ), G( + ) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY (VD = Rated VDRM, TJ = 125°C, RL = 10 k) MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) FIGURE 1 – RMS CURRENT DERATING PD , AVERAGE POWER DISSIPATION (WATTS) 125 115 105 95 85 75 40 FIGURE 2 – ON-STATE POWER DISSIPATION 30 20 10 0 0 5.0 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0 5.0 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 Motorola Thyristor Device Data MAC223 Series MAC223A Series FIGURE 3 – GATE TRIGGER CURRENT FIGURE 4 – GATE TRIGGER VOLTAGE NORMALIZED GATE CURRENT NORMALIZED GATE VOLTAGE 3.0 2.0 1.0 0.5 0.3 0.2 0.1 –60 VD = 12 V RL = 100 Ω 3.0 2.0 1.0 0.5 0.3 0.2 0.1 –60 VD = 12 V RL = 100 Ω –40 –20 0 20 40 60 80 100 120 140 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) FIGURE 5 – HOLD CURRENT i TM, INSTANTANEOUS ON-STATE CURRENT (AMPS) FIGURE 6 – TYPICAL ON-STATE CHARACTERISTICS NORMALIZED HOLD CURRENT 200 100 50 10 5.0 1.0 0.5 0.1 0 1.0 2.0 3.0 4.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ = 25°C 2.0 1.0 0.5 0.3 0.2 0.1 –60 ITM = 200 mA Gate Open –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 3 MAC223 Series MAC223A Series PACKAGE DIMENSIONS –T– B F C SEATING PLANE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0..


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