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MAAPSM0015 Dataheets PDF



Part Number MAAPSM0015
Manufacturers Tyco
Logo Tyco
Description DC-20 GHz GaAs MMIC Amplifier
Datasheet MAAPSM0015 DatasheetMAAPSM0015 Datasheet (PDF)

DC-20 GHz GaAs MMIC Amplifier Preliminary Rev. 2.0 MAAPSM0015 Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ DC-20 GHz GaAs MMIC Amplifier Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB Low Bias Current : 100mA 2.0 mm Description The M/A-COM MAAPSM0015 is a medium power wideband AGC amplifier that typically provides 11 dB of gain with 25 dB of AGC range. The circuit topology is a six-section traveling wave amplifier using co.

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DC-20 GHz GaAs MMIC Amplifier Preliminary Rev. 2.0 MAAPSM0015 Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ DC-20 GHz GaAs MMIC Amplifier Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB Low Bias Current : 100mA 2.0 mm Description The M/A-COM MAAPSM0015 is a medium power wideband AGC amplifier that typically provides 11 dB of gain with 25 dB of AGC range. The circuit topology is a six-section traveling wave amplifier using common source FETs which provide very wide bandwidth. Typical input and output return loss is 12 dB. RF ports are DC coupled, enabling the user to customize system corner frequencies. DC bias can be provided through the drain termination resistor without the need for an external bias inductor. For higher power applications, an external inductor can be used to bias the amplifier through the RFout or Vd_aux pads. Applications include OC-192 12.5 GBit/s receive AGC amplifier and lithium niobate Mach-Zehnder modulator driver amplifer. The MAAPSM0015 requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on wafer to ensure performance compliance. The device is provided in chip form. M/A-Com fabricates the MAAPSM0015 using a 0.5 µm gate length low noise multi-function self aligned gate (MSAG) MESFET process. This process features silicon nitride passivation and polimide scratch protection. The die thickness is 0.003”. 3.0 mm Primary Applications ¢ ¢ ¢ 12.5GBit OC-192 LN/MZ Driver 12.4GBit OC-192 AGC Receiver SONET/SDH Electrical Characteristics 8V, 100 mA Parameter Typ Units Bandwidth Gain Gain Flatness Input Return Loss Output Return Loss Reverse Isolation Psat (+8V, 100 mA) Noise Figure DC-20 11 + 0.75 -12 -12 >-13 21 7 GHz dB dB dB dB dB dBm dB DC-20 GHz GaAs MMIC Amplifier MAAPSM0015 Preliminary DC-20GHz Carrier-Mounted Performance Vds = 8,0V, Ids = 50, 70, 100mA 14 0 12 -5 100 mA -10 70 mA 100 mA S21 (dB) 10 70 mA 8 S11 (dB) -15 50 mA 6 -20 -25 50 mA 4 0 5 10 15 20 -30 0 5 10 15 20 Frequency (GHz) 0 Frequency (GHz) -5 70 mA 50 mA -10 S22 (dB) -15 -20 -25 100 mA 0 5 10 15 20 -30 Frequency (GHz) DC-20GHz Wafer Probe Data Vds = 8,0V, Ids = 100mA Vds=8V, Id=100mA 25 10 bias through RFout 23 8 Noise Figure (dB) Psat (dBm) 21 6 19 bias through Vd 4 17 2 15 0 5 10 15 20 0 0 5 10 15 20 Frequency (GHz) Frequency (GHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. COMPANY CONFIDENTIAL DC-20 GHz GaAs MMIC Amplifier MAAPSM0015 Preliminary MAAPSM0015 Bond Pad Location All Dimensions are in mm (inches) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel..


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