Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz
Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz
Features
q q q q q q
MAAM71200-H1
V 2.00
CR-16
2.7 dB Typical Noise Figure...
Description
Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz
Features
q q q q q q
MAAM71200-H1
V 2.00
CR-16
2.7 dB Typical Noise Figure 15.5 dB Typical Gain Single Bias Supply Low Current Consumption DC Decoupled RF Input and Output Ceramic Package
Description
M/A-COM’s MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package1. The MAAM71200-H1 is a packaged version of M/A-COM’s MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 ohms without the need for external components.
Dimensions are in inches.
The MAAM71200-H1 is ideally suited for microstrip assemblies where wire or ribbon bonds are used for interconnects. Typical applications include radar, EW and communication systems. The MAAM71200 is fabricated using a mature 0.5-micron gate length GaAs process for increased reliability and performance repeatability.
Typical Electrical Specifications, TA = +25°C, VDD = 4 V
Parameter Gain Noise Figure Input VSWR Output VSWR Output 1dB Compression Point Third Order Intercept Point Reverse Isolation Bias Current (IDD)
1.Consult factory for a leaded ceramic package version.
Units dB dB
Min. 14.5
Typ. 15.5 2.7 2.0:1 1.8:1
Max. 3.5
dBm dBm dB mA
11 21 30 40 55
Low Noise GaAs MMIC Amplifier
MAAM71200-H1
V 2.00
Absolute Maximum Ratings 1
Parameter Input Power VDD Junction Temperature Storage Temperature Thermal Resistance Absolute Maximum +20 dBm +9 Volts +150°C -65°C to +150°C 175°C/W
Functional Diagram
1. Operation...
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