GaAs MMIC Power Amplifier 2 - 6 GHz
Preliminary Specifications
GaAs MMIC Power Amplifier 2 - 6 GHz
Features
q q q q q q
MAAM26100-P1
V1.A
CR-15
-C.085
+30...
Description
Preliminary Specifications
GaAs MMIC Power Amplifier 2 - 6 GHz
Features
q q q q q q
MAAM26100-P1
V1.A
CR-15
-C.085
+30 dBm Saturated Output Power 18 dB Typical Gain 30% Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output High Performance Ceramic Bolt Down Package
.70 .530 4X .06 X 45° CHAMFER
10X .050 MIN
10 9
8
7 6
.159
-B-
.328 ±.010 .318 ±.010
Description
M/A-COM’s MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars. M/A-COM’s MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability.
2X .010 SQ. ORIENTATION TAB .115 ±.010 4X .050 .33
Ø .096
THRU
1 2
3
4 5
10X .010 ±.003 4X .100
Ø
.004 M A B C
.005 ±.002 -A.020
CERAMIC .040 BASE PLATE .090 MAX
Notes: (unless otherwise specified) 1. Dimensions are inches. 2. Tolerance: in .xxx = ±.010
Ordering Information
Part Number
MAAM26100-P1
Package
Ceramic Bolt Down
Typical Electrical Specifications, TA = +25°C , VDD = +8 V, VGG = -5 V
Parameter Small Signal Gain Input VSWR Output VSWR Output Power Power Added Ef...
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