MAAM26100

MAAM26100 GaAs MMIC Power Amplifier 2.0 - 6.5 GHz Features  Saturated Power: 30.5 dBm Typical  Gain: 19 dB Typical  Power Added Efficiency: 30%  On-Chip Bias Network  DC Decoupled RF Input and Output  RoHS* Compliant Description The MAAM26100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM26100 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Ordering Information Part Number MAAM26100 Package Die Rev. V7 Die Absolute Maximum Ratings 1,2 Parameter VDD VG1, VG2 VGG3 RF Input Power Channel Temperature Storage Temperature Absolute Maximum +9 V -2.5 V to -0.8 V -6 V to -3 V +17 dBm 150°C -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A-COM does not recommend sustained operation near these survivability limits. 3. VGG rating applies when using the optional on-chip resistor network. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400 is considering for developm...