MA786

Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 1 125 −55 to +125 Unit V V mA mA A °C °C 0.1 to 0.3 0.4 ± 0.2 1.1 I Absolute Maximum Ratings Ta = 25°C 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package(3-pin) Marking Symbol: M3T Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the ch...