Schottky Barrier Diodes (SBD)
MA4X746 (MA746)
Silicon epitaxial planar type
For super high speed switching For small cu...
Schottky Barrier Diodes (SBD)
MA4X746 (MA746)
Silicon epitaxial planar type
For super high speed switching For small current rectification I Features
Two isolated elements are contained in one package, allowing high-density mounting IF(AV) = 200 mA and VR < 50 V are achieved Optimum for high frequency rectification because of its short reverse recovery time (trr) Low forward voltage VF and good rectification efficiency Mini type 4-pin package
2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.1 –0.06
0.5R
2 (0.2) 0.60+0.10 –0.05 10°
1
(0.65)
5°
+0.2 0 to 0.1 1.1–0.1
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Non-repetitive peak Single forward-surge-current *2 Double *1 Peak forward current Average forward current Single Double *1 Single Double *1
Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg
Rating 50 50 1 0.75 300 225 200 150 150 −55 to +150
Unit V V A
Marking Symbol: M3M
mA
Internal Connection
3 4
mA °C °C
Junction temperature Storage temperature
2
1
Note) *1: Value per chip *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3.0 Conditions Min Typ Max 200 0.36 0.55 pF ns Unit µA V
Note) 1. This product is sensitive to...